mbed TLS v2.16.3
Data Fields
mbedtls_ctr_drbg_context Struct Reference

The CTR_DRBG context structure. More...

#include <ctr_drbg.h>

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Data Fields

unsigned char counter [16]
 
int reseed_counter
 
int prediction_resistance
 
size_t entropy_len
 
int reseed_interval
 
mbedtls_aes_context aes_ctx
 
int(* f_entropy )(void *, unsigned char *, size_t)
 
void * p_entropy
 
mbedtls_threading_mutex_t mutex
 

Detailed Description

The CTR_DRBG context structure.

Definition at line 169 of file ctr_drbg.h.

Field Documentation

◆ aes_ctx

mbedtls_aes_context mbedtls_ctr_drbg_context::aes_ctx

The AES context.

Definition at line 181 of file ctr_drbg.h.

◆ counter

unsigned char mbedtls_ctr_drbg_context::counter[16]

The counter (V).

Definition at line 171 of file ctr_drbg.h.

◆ entropy_len

size_t mbedtls_ctr_drbg_context::entropy_len

The amount of entropy grabbed on each seed or reseed operation.

Definition at line 177 of file ctr_drbg.h.

◆ f_entropy

int(* mbedtls_ctr_drbg_context::f_entropy) (void *, unsigned char *, size_t)

The entropy callback function.

Definition at line 186 of file ctr_drbg.h.

◆ mutex

mbedtls_threading_mutex_t mbedtls_ctr_drbg_context::mutex

Definition at line 192 of file ctr_drbg.h.

◆ p_entropy

void* mbedtls_ctr_drbg_context::p_entropy

The context for the entropy function.

Definition at line 189 of file ctr_drbg.h.

◆ prediction_resistance

int mbedtls_ctr_drbg_context::prediction_resistance

This determines whether prediction resistance is enabled, that is whether to systematically reseed before each random generation.

Definition at line 173 of file ctr_drbg.h.

◆ reseed_counter

int mbedtls_ctr_drbg_context::reseed_counter

The reseed counter.

Definition at line 172 of file ctr_drbg.h.

◆ reseed_interval

int mbedtls_ctr_drbg_context::reseed_interval

The reseed interval.

Definition at line 179 of file ctr_drbg.h.


The documentation for this struct was generated from the following file: